产品编号
1182389
CAS 号
1312-43-2
中文名称
氧化铟(III)
MDL 号
MFCD00011060
分子量
277.64
存储条件
2-8°C, protect from light, stored under nitrogen
网页展示纯度为入库指导纯度值，各批次间存在一定差异，实际纯度以收货为准
熔点
2000 °C
沸点
闪点
旋光
描述
[1]. Han Jin, et al. Sensing behavior of YSZ-based amperometric NO? sensors consisting of Mn-based reference-electrode and In?O? sensing-electrode. Talanta. 2012 Jan 15:88:318-23.
[2]. J J Lee, et al. Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread. J Nanosci Nanotechnol. 2013 May;13(5):3317-20.
[3]. Jae-Hong Jeon, et al. Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor. J Nanosci Nanotechnol. 2013 Nov;13(11):7535-9.
[4]. Jason M Thornton, et al. Efficient photocatalytic hydrogen production by platinum-loaded carbon-doped cadmium indate nanoparticles. ACS Appl Mater Interfaces. 2012 May;4(5):2426-31.
[5]. K H L Zhang, et al. Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111). J Phys Condens Matter. 2011 Aug 24;23(33):334211.
警示图
警示词
Warning
危险申明
H302-H315-H319-H335
警告申明
P261-P264-P270-P271-P280-P302+P352-P304+P340-P305+P351+P338-P321-P330-P337-P362+P364-P403+P233-P405-P501
GHS 编码
GHS07
现货供应
专业护航
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品质保障
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